Bonn 2020 – scientific programme

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T: Fachverband Teilchenphysik

T 109: Combined instrumentation session III: Silicon pixel detectors (joint session HK/T)

T 109.7: Talk

Friday, April 3, 2020, 12:30–12:45, J-HS K

TCAD Simulation of High-Voltage Monolithic Active Pixel Sensors — •Annie Meneses Gonzalez, Heiko Augustin, and Andre Schöning — Physikalisches Institut, Universität Heidelberg

The requirements for precision physics and the experimental conditions of several Particle Physics experiments lead often to challenging tracking detectors. High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) implemented in a commercial 180 nm High-Voltage CMOS process has been chosen as the baseline for the Mu3e Pixel Tracker and are under study for the application in future detectors like PANDA, P2, CLIC, and LHCb.

A full depletion over the pixel, a fast charge collection, and a high signal-to-noise ratio are essential to achieve highly efficient sensors and good time resolutions.

Technology Computer-Aided Design (TCAD) simulations have been used to develop and optimize HV-MAPS, aiming for a comprehensive understanding of the sensor characteristics. Simulation results of the pixel capacitance for different prototypes and pixel sizes will be presented.