Bonn 2020 – scientific programme

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T: Fachverband Teilchenphysik

T 110: Combined instrumentation session IV: Semiconductor detectors (joint session HK/T)

T 110.1: Talk

Friday, April 3, 2020, 11:00–11:15, H-HS XV

Investigation of light enhanced annealing of irradiated silicon strip detectors and pad diodes — •Mägdefessel Sven, Parzefall Ulrich, and Mori Riccardo — Uni Freiburg, Germany

Thermally induced annealing of irradiated silicon devices has been widely studied. Latest results indicate that charge carriers being generated during the annealing procedure can change charge states of the defect centers and therefore influence the annealing behaviour. Therefore, we irradiated silicon strip detectors and pad diodes during the annealing process with IR and green light to achieve different penetration depths and performed CV based impedance spectroscopy to investigate differences in defect behaviour compared to annealing in the dark.