Bonn 2020 – scientific programme

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T: Fachverband Teilchenphysik

T 110: Combined instrumentation session IV: Semiconductor detectors (joint session HK/T)

T 110.2: Talk

Friday, April 3, 2020, 11:15–11:30, H-HS XV

Temperature Scaling of Leakage Current in Irradiated Silicon Sensors — •Felix Wizemann, Kevin Kröninger, and Jens Weingarten — TU Dortmund, Experimentelle Physik IV

The leakage current of silicon sensors increases with radiation damage, which can be used to monitor fluence. For this, the bulk leakage current needs to be scaled with temperature using the parameter E_eff. In previous studies, this parameter was determined to be 1.21 eV for samples irradiated to fluences up to 1 × 10¹⁵ n_eq cm⁻². Sensors irradiated to higher fluences have shown lower values of E_eff.

To investigate this change in scaling behaviour, E_eff  was determined as a function of the applied bias voltage for irradiated samples with fluences from 1 × 10¹⁴ n_eq cm⁻² to 3 × 10¹⁵ n_eq cm⁻². Results of this study are presented in this talk.