Bonn 2020 – scientific programme
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T: Fachverband Teilchenphysik
T 110: Combined instrumentation session IV: Semiconductor detectors (joint session HK/T)
T 110.6: Talk
Friday, April 3, 2020, 12:15–12:30, H-HS XV
Ultra Fast Silicon Detectors for timing applications in HADES — •Wilhelm Krueger1, Nicolo Cartiglia2, Marco Ferrero2,3, Tetyana Galatyuk1,4, Mladen Kis4, Wolfgang Koenig4, Michal Koziel5, Sergey Linev4, Jan Michel5, Stefano Moneta6, Jerzy Pietraszko4, Adrian Rost1, Arnaud Schemm7, Valentina Sola2, Konrad Sumara8, Michael Traeger4, Michael Traxler4, and Christian Wendisch4 — 1TU Darmstadt, Germany — 2INFN, Sezione di Torino, Italy — 3Università del Piemonte Orientale, Novara, Italy — 4GSI, Darmstadt, Germany — 5Goethe-Universität Frankfurt, Germany — 6Universita di Pisa, Italy — 7IMT Atlantique, Campus de Nantes, France — 8Jagiellonian University in Kraków, Poland
In order to measure a precise time zero (T0) for particle identification produced in nucleon-nucleon or nucleus-nucleus collisions a time precision of 50 ps or better is required. Ultra fast silicon detectors (UFSD) enable such precision. In addition the combination of high spatial resolution, high time precision and high radiation hardness makes them an excellent alternative to the scCVD diamond detectors used so far by HADES for T0 measurements and for beam monitoring.
In this contribution we present the results of test measurements conducted at COSY in Juelich. Particular emphasis is put on achieving the desired precision for MIPs and on comparison of two different discriminator boards, one based on the NINO chip and the other, called PaDiWa, which is based on discrete components. This work has been supported by BMBF under ErUM -FSP C.B.M. and GSI.