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T: Fachverband Teilchenphysik
T 13: Pixel detectors I
T 13.5: Vortrag
Montag, 30. März 2020, 17:30–17:45, H-HS XIV
Characterization of Planar Pixel Sensors for the CMS Phase 2 Upgrade — •Finn Feindt1, Aliakbar Ebrahimi1, Erika Garutti1, Caroline Niemeyer1, Daniel Pitzl2, Georg Steinbrück1, Jörn Schwandt1, and Irene Zoi1 — 1Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg, Germany — 2Deutsches Elektronen-Synchrotron, Notkestraße 85, D-22607 Hamburg, Germany
The CMS Pixel Detector for the Phase 2 Upgrade of the CMS Experiment will have to withstand a 1 MeV neutron equivalent fluences φeq of up to 2 × 1016 cm−2 at 2.8 cm distance from the beam and enable tracking in a high track multiplicity environment caused by up to 200 proton collisions per bunch crossing.
To meet these requirements, planar pixel sensors with pixel sizes of 50×50 µm2 or 100×25 µm2 and an active thickness of 150 µm were designed, produced and characterized after proton or neutron irradiation to φeq above 5 × 1015 cm−2, corresponding to the fluence expected in the second layer of the CMS Pixel Detector. The sensors differ in the design of implantation, metalization and biasing scheme and the pixel isolation technology.
The presented results show that the irradiated planar pixel sensors fulfill the requirement of efficiency є = 0.99 at operation voltages below 800 V. In addition, the characterization and comparison of the different sensor designs provide valuable input for the final choice of the sensor design.