Bonn 2020 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 31: Pixel detectors II

T 31.1: Gruppenbericht

Dienstag, 31. März 2020, 17:00–17:20, H-HS XIV

Overview of depleted monolithic active pixel sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS technologies — •Tianyang Wang and Konstantinos Moustakas — Physikalisches Institut, University of Bonn, Germany

CMOS pixel sensors utilizing commercial processes have already been used in high energy particle physics experiments for high precision charged particle tracking. They integrate sensing elements and electronics on the same silicon substrate and can offer lower material budget, lower cost and easier module assembly as compared to the hybrid pixels where the sensing and electronic parts are different entities mated with the cost intensive bump-bonding technology. However, the existing mature CMOS devices cannot withstand the high particle rate and high radiation environments encountered, for example, at the future HL-LHC, with the main limiting factor being the predominant diffusion movement for charge collection. We have been developing CMOS pixels with greatly enhanced radiation tolerance and timing precision for many years. The key ingredient for such sensors is a fully depleted sensing volume that allows for fast charge collection in a strong drift field. We have focused recently on two development lines, pursuing two different sensor design concepts in the LFoundry 150 nm and TowerJazz 180 nm CMOS technologies respectively. Large-scale demonstrator chips incorporating a fast readout architecture have been designed and characterized in both technologies. In this contribution, an overview of R&D activities for CMOS pixels in the aforementioned technologies will be presented.