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T: Fachverband Teilchenphysik

T 31: Pixel detectors II

T 31.3: Talk

Tuesday, March 31, 2020, 17:35–17:50, H-HS XIV

Active pixel sensor with small pixel size designed for capacitive readout with RD53 ASIC — •Hui Zhang — Karlsruher Institut für Technologie

We are designing HVCMOS sensors for several particle physics experiments. These sensors are simple and low cost alternative to classical hybrid detectors. HVCMOS sensor can either contain readout circuits on chip (monolithic sensors) or they can be readout by an external readout ASIC by means of capacitive signal transmission (capacitively coupled hybrid particle detector - CCPD). Both approaches have certain advantages. The detector chip for a CCPD has been implemented in an 180nm HVCMOS process. Depleted high voltage n-well/p-substrate diodes are used as sensors. Every pixel has a size of 25μm x 50μm and contains a charge sensitive amplifier and a simple comparator. The outputs of two pixel comparators are connected to a transmitting electrode (pitch 50μm x 50μm) implemented in the top metal layer of the sensor chip. A process modification has been done specially for this chip -- deep p allows implementation of comparators in pixel. The readout chip and the sensor chip can be mechanically connected either by glue (standard option) or as a novel approach with a small number of large bump bonds. The output signals of the sensor chip are transmitted capacitively to the input pads of the readout chip which are connected to the signal receivers. The sensor chip has been produced and tested. Parameters such as amplitude, pulse width, rise time and signal noise ratio have been measured. In this talk, the sensor design and the measurement results will be presented.