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T: Fachverband Teilchenphysik
T 31: Pixel detectors II
T 31.4: Vortrag
Dienstag, 31. März 2020, 17:50–18:05, H-HS XIV
Monolithic Pixel Sensors with sub-nanosecond time resolution in BiCMOS — Heiko Augustin1, Ivan Peric2, André Schöning1, and •Benjamin Weinläder1 — 1Physikalisches Institut, Heidelberg, Germany — 2Karlsruher Institut für Technologie, Germany
In recent years, the development of High Voltage Monolithic Active Pixel Sensors (HV-MAPS) has been strongly driven forward. As an example of the latest successes, the MuPix8 can be mentioned, which reached a time resolution of σt = 6.8 ± 0.2 ns.
The combination of HV-MAPS with a BiCMOS technology opens up further possibilities, especially for the improvement of the time resolution. At the University of Geneva a time resolution of σt = 46 ± 2 ps has been achieved for a small prototype sensor based on BiCMOS.
According to this concept and based on the experience from the MuPix development a new R&D project was started , with the ambition to achieve a time resolution below 1 ns over a large pixel matrix. For this project the BiCMOS technology SG13S from IHP is used, which offers great advantages for high-frequency circuits. Therefore, the analogue circuits inside the pixel will be redesigned, making use of the bipolar technology. The concept here is to use a plain bipolar amplifier in order to decrease the noise from various components and the rise time of the signal edge. Simulations with Cadence Virtuoso® are done to investigate the performance of BiCMOS technology and to make a prediction about the time resolution of the new read-out tree.