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T: Fachverband Teilchenphysik
T 72: Semiconductor detectors
T 72.1: Vortrag
Donnerstag, 2. April 2020, 16:30–16:45, H-HS IX
Transient Current Technique (TCT) using alpha particles and red laser on irradiated silicon detectors — •Mohammadtaghi Hajheidari, Erika Garutti, Georg Steinbrueck, Joern Schwandt, and Robert Klanner — Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg, Germany
The luminosity of CMS Phase 2 will increase to 7.5 × 1032 cm−2s−1.The inner layer of the tracker detector will experience a fluence up to 2.6 × 1016 neq/cm2. This will induce a radiation damage to the silicon sensors and change their performance. One of the important radiation effects on silicon detectors is the introduction of trapping centers which reduces the Charge Collection Efficiency (CCE).
Transient Current Technique (TCT) is an experimental tool to study the trapping probabilities of charge carriers inside an irradiated sensor. The transient pulses induced by front-side/ back-side illumination with red light laser (wavelength of 660 nm ) or alpha particles (energy of 5 MeV) are dominated by holes and electrons, respectively. Literature has reported contradicting trapping times of e/h using alpha and laser TCT. Therefore, it is necessary to have a systematic comparison between the two modalities.
This work presents the results of the alpha- and red laser-TCT measurements on two irradiated pad diodes with fluences of 2 × 1015 and 4 × 1015 neq/cm2. By measuring the CCE values, the trapping times of e/h are calculated.