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T: Fachverband Teilchenphysik

T 72: Semiconductor detectors

T 72.2: Vortrag

Donnerstag, 2. April 2020, 16:45–17:00, H-HS IX

TPA-TCT -- Two Photon Absorption - Transient Current Technique — •Moritz Wiehe^1,2, Marcos Fernandez Garcia^1,5, Isidre Mateu¹, Michael Moll¹, Raúl Montero Santos³, Rogelio Palomo Pinto⁴, and Ivan Vila Alvarez⁵ — ¹CERN — ²Universität Freiburg — ³Universidad del Pais Vasco (UPV-EHU) — ⁴Universidad de Sevilla (US) — ⁵Instituto de Fisica de Cantabria (CSIC-UC)

The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon devices with unprecedented spatial resolution. Currently the first compact TPA-TCT setup is under development at CERN. The current status of the setup and first measurements are presented.