Bonn 2020 – scientific programme

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T: Fachverband Teilchenphysik

T 72: Semiconductor detectors

T 72.3: Talk

Thursday, April 2, 2020, 17:00–17:15, H-HS IX

Improvement of a Transient Current Technique (TCT) setup and first results obtained with silicon diodes — •Falko Barth, Kevin Kröninger, Jonas Lönker, Mareike Wagner, and Jens Weingarten — TU Dortmund, Lehrstuhl für Experimentelle Teilchenphysik IV

The Transient Current Technique (TCT) can be used for characterisation of semiconductor detectors. Charge is deposited in the (silicon) diodes using red to infrared lasers. For red lasers (672 nm) th charges are created close to the surface which is illuminated, leading to one kind of charge carriers being absorbed very quickly, leaving only the other kind of charge carriers to generate a signal while drifting in the electric field in the sensor. The induced signal is amplified and read out using a high-bandwidth oscilloscope. Analysis of the signal yields information on the electric field in the sensor bulk and the collected charge. This talk will present TCT results using different wavelength lasers as well as sensor materials and thicknesses.