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T: Fachverband Teilchenphysik
T 72: Semiconductor detectors
T 72.9: Vortrag
Donnerstag, 2. April 2020, 18:30–18:45, H-HS IX
A Proton Irradiation Site for Silicon Detectors at Bonn University — •Pascal Wolf1, David-Leon Pohl1, Jochen Dingfelder1, Paul-Dieter Eversheim2, and Norbert Wermes1 — 1Physikalisches Institut, Universität Bonn — 2Helmholtz Institut für Strahlen- und Kernphysik, Universität Bonn
A proton irradiation site has been developed at Bonn University. The site is located at the Bonn Isochronous Cyclotron of Helmholtz Institut für Strahlen- und Kernphysik (HISKP) which provides protons with 14 MeV kinetic energy and beam currents of a few nA up to 1 µA. Dedicated beam diagnostics have been developed for online beam-current and position monitoring at extraction, allowing the determination of the proton fluence φp at the device with an accuracy at the percent level. Evaluation of irradiated silicon structures yield a proton hardness factor which allows to irradiate up to 1016 neq/cm2 in approximately one hour. Typical irradiation parameters, characteristics of the beam diagnostics as well as proton hardness factor measurements and comparisons with various irradiation facilities are presented.