Bonn 2020 – scientific programme
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T: Fachverband Teilchenphysik
T 82: Pixel detectors IV
T 82.2: Talk
Thursday, April 2, 2020, 16:45–17:00, L-2.004
Guard Ring investigation of Silicon Sensors with Modified Pixel Implant shapes in the context of the ATLAS experiment — •Serena Di Pede1, Andreas Gisen2, Valerie Hohm2, Kevin Kröninger2, Jonas Lönker2, Maximiliano Sioli1, Mareike Wagner2, Jens Weingarten2, and Felix Wizemann2 — 1Physics Department Bologna University, Italy — 2TU Dortmund, Experimentelle Physik IV
Based on the standard design of the planar n+−in−n silicon pixel sensors of the innermost part of the tracking detector of the ATLAS experiment, six modified pixel designs were developed in Dortmund in order to increase the average electric field and thus the radiation hardness. The REINER pixel sensors contain these six modified pixel implantation shapes beside structures with the standard pixel design. It is well-known that the high-voltage capability of detector diodes fabricated in the planar process is limited by the electric field generated at the edge of the junction. An approach to reduce the electric field at the junction edges is to use floating guard rings. Each pixel structure of the REINER sensor is provided by 13 guard rings and can be biased and investigated separately. This study investigates the guard ring structure of each of the eight pixel designs as well as the influence among the guard ring structure of the different pixel designs, in order to investigate the strength of the electric field at the edge and the phenomenon of the leakage current creation in the bulk and the surface of each pixel implant.