Dresden 2020 – scientific programme

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DS: Fachverband Dünne Schichten

DS 1: Focus: Diamond Technology and Electronics (joint session KFM/DS/HL)

DS 1.3: Invited Talk

Monday, March 16, 2020, 10:50–11:20, HSZ 105

Diamond: Material of the future for high power, high frequency devices and quantum applications — •Shannon Nicley — Department of Materials, University of Oxford, Oxford, UK

Diamond is an exceptional material in many ways, not only for its well known hardness and highest room temperature conductivity, but also electronic properties like high electron and hole mobilities and a high electronic breakdown field strength. These properties predict that diamond electronic devices should have superior high power and high frequency performance over other semiconductor materials. Diamond is also a promising solid-state host for atomic scale defects for quantum applications. The realisation of diamond electronic devices and the full implementation of diamond quantum applications have both been limited in part by our ability to reliably grow high quality single crystal diamond. Control over the incorporation of dopant atoms such as boron and phosphorus is key for high power applications, and the ability to grow high purity, low-strain diamond as well as precisely place quantum defects remain areas of active investigation. I will give an overview of the growth of synthetic diamond and review recent progress in the control of boron and phosphorus doping. I will also present a very recently developed method for the deterministic and accurate placement of optically coherent NV centres using a laser writing technique. I will discuss the challenges in this field and give an outlook for both extreme electronic device and quantum applications.