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DS: Fachverband Dünne Schichten

DS 11: 2D semiconductors and van der Waals heterostructures II (joint session HL/DS)

DS 11.5: Vortrag

Montag, 16. März 2020, 16:15–16:30, POT 81

Optical Initialisation and Readout of Spin Defects in hBN — •A. Gottscholl¹, M. Kianinia², V. Soltamov¹, C. Bradac², C. Kasper¹, K. Krambrock³, A. Sperlich¹, M. Toth², M. Dietz¹, I. Aharonovich², and V. Dyakonov¹ — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — ²School of Mathematics and Physical Sciences, Iniverity of Technology Sydney, Ultimo, NSW 2007, Australia — ³Departomento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil

The concept of optically addressable spin states in solids is considered as a major building block of upcoming quantum technologies. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spin-dependent processes in 2D materials has remained elusive. Optically accessible spin states in hBN are already theoretically predicted, however, they have not been observed experimentally yet. We investigated a bright 850nm defect-related fluorescence in hBN with magnetic resonance techniques and identified it as a negatively charged boron vacancy V_B⁻, possessing a spin triplet ground state and a zero field splitting of 3.5 GHz [1]. The defect shows an optically detected magnetic resonance signature at room temperature and can be optically spin polarized at lower temperatures. Our results constitute a leap forward in establishing two-dimensional hBN as a prime platform for scalable quantum technologies.
[1] Gottscholl et al., arXiv:1906.03774