Dresden 2020 – scientific programme

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DS: Fachverband Dünne Schichten

DS 12: Thermoelectric and Phase Change Materials

DS 12.2: Talk

Monday, March 16, 2020, 16:45–17:00, CHE 91

Impact of interfaces on bipolar resistive switching behavior in amorphous Ge₂Sb₂Te₅ thin films — •Hagen Bryja, Christoph Grüner, Jürgen W. Gerlach, Mario Behrens, Martin Ehrhardt, Bernd Rauschenbach, and Andriy Lotnyk — Leibniz Institute of Surface Engineering (IOM), Permoserstraße 15, 04318 Leipzig, Germany

Electrochemical metallization (ECM) memories have attracted much attention as candidates for next generation non-volatile memory applications due to their fast switching, simple structure, high scalability and low energy consumption. Chalcogenide compounds like Ge-Sb-Te-based materials are extensively studied solid electrolytes for such devices and considered within the most promising candidates. However, besides Cu, Ag and Te, the influence of different electrode materials in chalcogenide-based ECM cells has not been investigated and the origin of analog resistive switching, observed in some devices, is still under debate. To shed light on these questions, ECM cells were fabricated using various electrode materials (Al, Ti, Cr, Ta, Co, Cu, Ag, Au, Pt and Cr-CrO_x), a pulsed laser deposited amorphous Ge₂Sb₂Te₅ solid electrolyte and a Pt counter electrode. The devices were studied by electrical measurements, secondary ion mass spectrometry and transmission electron microscopy in conjunction with energy-dispersive X-ray spectroscopy. Depending on the utilized electrode material, analog switching, digital switching or no switching occurs. It is observed that the switching behavior is strongly affected by the GST/electrode interfacial interactions, i.e. diffusion and reaction layer formation.