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DS: Fachverband Dünne Schichten
DS 18: Transport Properties
DS 18.1: Vortrag
Dienstag, 17. März 2020, 11:45–12:00, CHE 89
Magnetoconductance of Bi quantum films in parallel magnetic fields — •Doaa Abdelbarey1, Christoph Tegenkamp1,2, and Herbert Pfnür1 — 1Institut für Festkörperphysik, Leibniz Universität Hannover — 2Institut für Physik, TU Chemnitz
Bismuth has attracted a lot of interest because of its unique electronic properties such as low carrier concentrations and high carrier mobilities, In particular, strong Rashba splitting of the edge states appears in quantum films generated by epitaxial growth. Thus high-quality thin films open new pathways to tailor the electronic properties further. Magneto-conductance of films grown epitaxially on Si(111) with a thickness of 10 to 100 bilayers (BL) was measured at T= 9 K in parallel magnetic fields up to 4T. For B-fields in plane and parallel to the current direction only WAL is observed irrespective of thickness. However, if the B-fields are in plane, but perpendicular to the current, a crossover from weak anti-localization (WAL) to weak localization (WL) and back is seen for films up to 70 BL. For thicker films only WAL is observed. The observed coherent part of conductance in parallel B-fields perpendicular to current is characterized by an intriguing change from strong to weak coupling between edge states as a function of layer thickness and their hybridization with the quantized bulk states. For films thicker than 50 BL also incoherent scattering comes into play, which dominates above 80 BL.