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14:00 |
DS 19.1 |
Resolving the interlayer charge transfer in van der Waals heterostructures by ultrafast THz emission nanoscopy — •Markus Plankl, Martin Zizlsperger, Fabian Mooshammer, Felix Schiegl, Fabian Sandner, Markus A. Huber, Tom Siday, Jessica L. Boland, Tyler L. Cocker, and Rupert Huber
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14:15 |
DS 19.2 |
Influence of dark states on excitonic spin relaxation in transition metal dichalcogenides — •Malte Selig, Dominik Christiansen, and Florian Katsch
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14:30 |
DS 19.3 |
Kelvin probe force microscopy-based direct measurements of contact resistance in 2D semiconductor thin film transistors — •Aleksandar Matkovic, Andreas Petritz, Gerburg Schider, Markus Krammer, Markus Kratzer, Michael Gärtner, Andreas Terfort, Christian Teichert, Egbert Zojer, Karin Zojer, and Barbara Stadlober
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14:45 |
DS 19.4 |
MOVPE of large-scale 2D-2D heterostructures for optoelectronic applications — Annika Grundmann, Clifford McAleese, Ben Richard Conran, Andrew Pakes, Dominik Andrzejewski, Tilmar Kümmel, Gerd Bacher, Kenneth Bo Khin Teo, •Michael Heuken, Holger Kalisch, and Andrei Vescan
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15:00 |
DS 19.5 |
Efficient Hot Electron Transfer at Graphene-WS2 van der Waals Bilayers — SHuai Fu and •Hai Wang
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15:15 |
DS 19.6 |
Excitation Induced Dephasing in Monolayer Transition Metal Dichalcogenides — •Florian Katsch, Malte Selig, and Andreas Knorr
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15:30 |
DS 19.7 |
Dirac physics in honeycomb semiconductors — •Christiaan Post, Nathali Franchina Vergel, Tomas Meerwijk, Jesper Moes, Xavier Wallart, Guillaume Fleury, Ludovic Desplanque, Ingmar Swart, Christophe Delerue, Bruno Grandidier, and Daniel Vanmaekelbergh
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15:45 |
DS 19.8 |
Structural and electronic properties of twisted MoS2 bilayers — •Somepalli Venkateswarlu, Andreas Honecker, and Guy Trambly de Laissardière
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