Dresden 2020 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 19: 2D semiconductors and van der Waals heterostructures IV (joint session HL/DS/O)

DS 19.4: Vortrag

Dienstag, 17. März 2020, 14:45–15:00, POT 81

MOVPE of large-scale 2D-2D heterostructures for optoelectronic applications — Annika Grundmann¹, Clifford McAleese², Ben Richard Conran², Andrew Pakes², Dominik Andrzejewski³, Tilmar Kümmel³, Gerd Bacher³, Kenneth Bo Khin Teo², •Michael Heuken^1,4, Holger Kalisch¹, and Andrei Vescan¹ — ¹Compound Semiconductor Technology, RWTH Aachen University, Aachen, Germany — ²AIXTRON Ltd., Cambridge, United Kingdom — ³Werkstoffe der Elektrotechnik and CENIDE, University Duisburg-Essen, Duisburg, Germany — ⁴AIXTRON SE, Herzogenrath, Germany

Vertical heterostructures of two (or more) different 2D layer provide many fascinating opportunities by combining the unique intrinsic chemical, physical and (opto)electronic properties of 2D materials. Without the need of consideration of lattice matching, a nearly infinite number of potential combinations of 2D layers are possible. Transition metal dichalcogenide (TMDC) monolayers are the most widely studied 2D semiconductors beyond graphene and thus provide a strong basis for understanding the properties of 2D heterostructures. Unlike mechanical exfoliation, direct successive growth of 2D-2D heterostructures requires a controlled synthesis of the respective monolayers with pristine interlayer interfaces and no intermixing of disparate layers. Here, we report on direct successive MOCVD of vertical MoS₂-WS₂ and WS₂-MoS₂ heterostructures as well as MOCVD of WS₂ and MoS₂ onto graphene previously deposited in another MOCVD reactor.