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DS: Fachverband Dünne Schichten

DS 2: Focus Session: Topological Phenomena in Synthetic Matter I (joint session DS/O)

DS 2.1: Hauptvortrag

Montag, 16. März 2020, 09:30–10:00, CHE 89

In situ fabrication of (Bi,Sb)-based topological insulator - superconductor hybrid devices — •Peter Schüffelgen — Forschungszentrum Jülich, Peter Grünberg Institute 9, Jülich, Germany

With their experimental verification in 2007, topological insulators render a new and fascinating material class. A band inversion in the bulk of a 3D topological insulator creates a 2D metallic Dirac system at the physical surface of those 3D crystals. The surface Dirac states are topologically protected and have their spin locked to their momentum. This intrinsic quantum spin texture enables the realization of novel technologies, such as elusive Majorana quantum bits. In this talk, I will introduce the material class of (Bi,Sb)-based topological insulators and discuss experimental challenges. I will present an in situ process that makes it possible to construct hybrid devices comprised of topological and superconductive nanostructures fully under ultra-high vacuum conditions via molecular beam epitaxy. A combination of stencil lithography and selective area growth allows for the realization of a variety of superconductor-topological insulator hybrid devices and solves the associated fabrication challenges.