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DS: Fachverband Dünne Schichten

DS 21: Layer Properties I: Electronic Properties

DS 21.2: Vortrag

Mittwoch, 18. März 2020, 09:45–10:00, CHE 91

In-situ probing of the thickness-dependent electronic properties of BaBiO3 — •Rosa Luca Bouwmeester, Kai Sotthewes, and Alexander Brinkman — University of Twente, Enschede, the Netherlands

Being the parent compound of the high-Tc superconductors BaPb1-xBixO3 and Ba1-xKxBiO3, single crystal BaBiO3 has been studied extensively. Its insulator band gap is thought to be due to a breathing distortion [1,2,3]. In recent years, the thickness of BaBiO3 thin films is taken as a new degree of freedom to study its influence on the electronic properties [4,5,6]. In the ultra-thin limit, metallicity is predicted because the breathing distortion is suppressed. Experimentally, no insulator-to-metal transition has yet been observed. Here, in-situ scanning tunneling microscopy (STM) studies are performed on BaBiO3 thin films with thicknesses in the range of 4 unit cells to 50 nm. For the first time, in the ultra-thin limit, metallic behavior is observed.

References

[1] H. Sato et al., Nature 338, 241-243 (1989)

[2] S. Pei et al., Phys. Rev. B 41, 4126 (1990)

[3] K. Inumaru et al., Phys. Rev. B 78, 132507 (2008)

[4] G. Kim et al., Phys. Rev. Lett. 115, 226402 (2015)

[5] H.G. Lee et al., APL Materials 6, 016107 (2018)

[6] M. Zapf et al., Phys. Rev. B 99, 245308 (2019)