Dresden 2020 – scientific programme

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DS: Fachverband Dünne Schichten

DS 21: Layer Properties I: Electronic Properties

DS 21.5: Talk

Wednesday, March 18, 2020, 10:30–10:45, CHE 91

Material selection and diffusion control for electrochemical metallization memory by using nano-pillar structure diffusion barrier — •Yen Kai Cheng — Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

Ag and Cu based electrodes with TiOx and HfOx based electrolytes electrochemical metallization (ECM) random access memory is a promising candidate for nonvolatile memory applications due to its simple structure and excellent performances. However, several challenges are needed to solve as the cell area is scaled down, especially for the device reliability and variability. Since the formation and rupture of the conductive filaments is stochastic, the injection of cations plays a critical role in improving the reliability and variability. In this study, two directions are considered, First, the combinations of different electrode/electrolyte cause the diffusivity differences, result in different degrees of cation injections and LRS retention failure times. Second, an Al2O3 layer with nano-pillar array architecture inserted between the electrode and switching layer is demonstrated. The width between the nano-pillar is tunable from 10 nm to 30 nm by changing the coverage of Al2O3 layer. The Al2O3 layer is served as the barrier that restrained the Ag and Cu atoms to diffuse into the electrolyte. With this architecture design, the resistive switching behaviors not only show different degrees of multi-level storage potential, but also provide a roadmap and show which kind of electrode/electrolyte has the potential in the neuron application.