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DS 21: Layer Properties I: Electronic Properties
Mittwoch, 18. März 2020, 09:30–10:45, CHE 91
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09:30 |
DS 21.1 |
Band structures of HgTe films from the cyclotron resonance — •Jan Gospodaric, Alexey Shuvaev, Vlad Dziom, Alena Dobretsova, Nikolay Nikolaevich Mikhailov, Ze Don Kvon, Elena Novik, and Andrei Pimenov
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09:45 |
DS 21.2 |
In-situ probing of the thickness-dependent electronic properties of BaBiO3 — •Rosa Luca Bouwmeester, Kai Sotthewes, and Alexander Brinkman
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10:00 |
DS 21.3 |
Magnetodielectric Effect and Interface Couplings in LaMnO3/LaNiO3 Superlattices — •Philipp Ksoll, Vladimir Roddatis, and Vasily Moshnyaga
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10:15 |
DS 21.4 |
Orbital- and thickness dependent band engineering of WSe2 by potassium surface functionalization — •Tom Klaproth, Carsten Habenicht, Roman Schuster, Bernd Büchner, Martin Knupfer, and Andreas Koitzsch
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10:30 |
DS 21.5 |
Material selection and diffusion control for electrochemical metallization memory by using nano-pillar structure diffusion barrier — •Yen Kai Cheng
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