Dresden 2020 – scientific programme
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DS: Fachverband Dünne Schichten
DS 22: 2D semiconductors and van der Waals heterostructures V (joint session HL/DS/O)
DS 22.4: Talk
Wednesday, March 18, 2020, 10:15–10:30, POT 81
Tip-enhanced Raman spectroscopy combined with other Scanning Probe Microscopy Methods: Focus on 2D Materials — •Jana Kalbacova1, Marc Chaigneau2, and Andrey Krayev3 — 1HORIBA Jobin Yvon GmbH, Germany — 2HORIBA Scientific, France — 3HORIBA Scientific, USA
New two dimensional materials are on the rise. After the wonder material graphene, new materials such as MoS2, MoSe2, WSe2 have an intrinsic bandgap and as such are opening new doors for semiconductor applications. Raman spectroscopy offers information on the chemical structure of materials but cannot provide information on the electronic properties such as surface potential or photocurrent of our sample. Co-localized measurements combining scanning probe microscopy (SPM) with Raman spectroscopy can already bring a wealth of information; however, further improvements can be obtained by a tip that will act as an antenna and amplify the Raman signal and thus breaking the diffraction limit in a method called Tip-enhanced Raman spectroscopy (TERS). Typically spatial resolution of 10 - 20 nm can be achieved. In this contribution, we investigate different 2D materials by a combination of TERS, tip-enhanced photoluminescence, Kelvin probe microscopy, and other SPM methods to show very locally for example doping variations or defects that would otherwise go unnoticed with other macro- and microscopic techniques.