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DS: Fachverband Dünne Schichten

DS 27: Focus Session: Functional Metal Oxides for Novel Applications and Devices I (joint session HL/DS)

DS 27.6: Hauptvortrag

Mittwoch, 18. März 2020, 17:15–17:45, POT 81

Oxide Memristors for unified data storage and data processing — •Heidemarie Schmidt — Leibniz-IPHT Jena — IFK, FSU Jena — Fraunhofer ENAS Chemnitz

In the future, new hardware components will determine the power and strength of artificial intelligence and manchine learning. These components are called memristors [1]. The first memristor with unified analog data storage and information processing is the BiFeO3 (BFO) memristor. BFO is an electroforming-free, bipolar memristor and its potential has been shown in in-memory information processing [2], neuromorphic computing [3], and hardware cryptography [4]. Another electroforming-free memristor is the unipolar memristor YMnO3 (YMO). In order to develop memristor technology and applications further, it is more than ever necessary to understand the underlying resistive switching mechanisms when a write voltage is applied. We discuss results from quasi-static test measurements on BFO [5] and from temperature dependent transport measurements on YMO [6]. [1] Leon Chua, IEEE Transactions on Circuit Theory 18, 507, 1971 [2] T. You et al., Adv. Funct. Mat. 24, 3357-3365, 2014. [3] N. Du et al., Front. Neurosci. 9, 227, 2015. [4] N. Du et al., J. Appl. Phys. 115, 124501, 2014. [5] N. Du et al., Phys. Rev. Applied 10, 054025, 2018. [6] V.R. Rayapati et al., J. Appl. Phys. 124, 144102, 2018