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DS: Fachverband Dünne Schichten
DS 28: Poster: Thin Film Properties: Structure, Morphology and Composition
DS 28.11: Poster
Mittwoch, 18. März 2020, 15:00–18:00, P1A
Benefits of Ion-beam-assisted Sputtering on Chalcogenides — •Kai Scheuvens1, Peter Kerres1, and Matthias Wuttig1,2 — 1I. Physikalisches Institut (IA), RWTH Aachen University — 2JARA-FIT, RWTH Aachen University
Chalcogenide phase change materials (PCM) have been of great interest for research as well as application in fast switching data storages. Our sputter chamber, which is part of an UHV cluster, allows producing high quality textured thin films with a broad range of deposition parameters while keeping the oxygen contamination at a minimum. However, due to the chamber design, the fabrication of dense amorphous layers has been proven difficult. XRR Measurements on amorphous thin films show roughly 10% less density compared to other sputtered films of the same material, hinting at voids in the thin film. The formation of voids can be suppressed by applying additional energy to the film during deposition in the form of an ion beam. The influence of this ion beam assisted deposition (IBAD), specifically in terms of film density and stoichiometry, will be investigated in this study. Samples with varying ion fluxes will be produced and characterized via XRD, XRR, XPS and AFM.