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DS: Fachverband Dünne Schichten

DS 28: Poster: Thin Film Properties: Structure, Morphology and Composition

DS 28.12: Poster

Mittwoch, 18. März 2020, 15:00–18:00, P1A

Interface effects in the electronic structure of chalcogenide heterostructures — •Peter Kerres¹, Matthias Dück¹, Kai Scheuvens¹, and Matthias Wuttig^1,2 — ¹1st Institute of Physics "new Materials", RWTH Aachen University, 52066 Aachen, Germany — ²JARA-FIT, RWTH Aachen University, Germany

While thin film devices containing homogenous films of GeSbTe based phase change materials (PCM) have already found their way into applications, heterostructure applications of phase change materials, i.e. chalcogenide superlattices are still topic of ongoing research. In the heterostructures, the focus of study lies in the interface region between the two constituents. In this study, we focus on the GeTe/Sb₂Te₃ Interface and employ X-ray photoelectron spectroscopy (XPS) to find differences in the electronic structure of the heterostructure compared to single films of GeTe, Sb₂Te₃ and an alloyed GeSbTe compound. Several thin film stacks of textured crystalline films were prepared with heated sputter deposition in an UHV cluster and afterwards transferred to the analysis chamber for in-situ XPS measurements. Angle dependent core level spectroscopy (ARXPS) is employed to extract depth dependent data and attribute parts of the spectra to interface effects. The structure of the thin films is additionally verified with X-ray diffraction (XRD) and reflectometry (XRR) measurements.