Dresden 2020 – scientific programme
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DS: Fachverband Dünne Schichten
DS 28: Poster: Thin Film Properties: Structure, Morphology and Composition
DS 28.13: Poster
Wednesday, March 18, 2020, 15:00–18:00, P1A
Investigation of in-plane texture of GeTe thin films — Marc Pohlmann1, Marvin Kaminski1, •Maria Häser1, and Matthias Wuttig1,2 — 1I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen Germany — 2JARAFIT Institute Green-IT, RWTH Aachen University and Forschungszentrum Jülich, 52056 Aachen, Germany
Chalcogenide-based Phase Change Materials (PCM) are a prominent candidate for energy efficient memory devices. This material class shows a strong difference in its electrical and optical properties between the amorphous and crystalline state. To understand the crystalline state in thin film devices the preparation of highly textured films for structural characterization is crucial. In this study, Molecular beam epitaxy is employed to grow GeTe thin films on two different Si(111) surfaces: A 7x7 Reconstruction and a R30∘-√3×√3-Sb-termination. Using X-Ray Diffraction methods (Θ-2Θ-Scans, Reciprocal space maps and Φ-Scans) two very different in-plane textures for the two surfaces were investigated. Additionally, a simulation of the mismatch between the 7x7 reconstructed Si(111) surface and thin film was performed and compared to the XRD results.