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DS: Fachverband Dünne Schichten
DS 29: Poster: 2D Materials and their Heterostructures
DS 29.9: Poster
Mittwoch, 18. März 2020, 15:00–18:00, P1A
Dry-transfer of graphene and h-BN heterostructures onto hydrogen-terminated diamond — •Vasilis Dergianlis, Martin Geller, Dennis Oing, Nicolas Wöhrl, and Axel Lorke — Faculty of Physics and CENIDE, University of Duisburg-Essen, Lotharstr. 1, 47057, Duisburg, Germany
Graphene is a 2D carbon allotrope that exhibits exceptional mechanical strength and electron mobility. Due to its high electron conductivity, graphene is considered one of the best conductors and can be also used as gate electrode in transistor-type devices. A second very important carbon allotrope is diamond, which is a wide-bandgap semiconductor in its bulk form. Chemical vapor deposition (CVD) grown, hydrogen-terminated diamond exhibits surface conductivity by a two-dimensional hole-gas (2DHG).
In our work, we are combining the two aforementioned carbon allotropes. We implement a dry transfer method to position graphene onto diamond in a transistor-like structure, where h-BN serves as the gate-dielectric and graphene as a top gate.The sample consists of bulk CVD grown diamond, where the H-termination of the surface induces a 2DHG as a conductive surface layer [1]. Graphene and h-BN flakes are exfoliated and transferred from SiO2 substrates onto the functionalized diamond surface. We show device characterization such as IV-characteristics and gate-dependent photoluminescence.
[1] Oing, D., et al. Diamond and Related Materials (2019): 107450.