Dresden 2020 – scientific programme

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DS: Fachverband Dünne Schichten

DS 3: Thin Film Applications I

DS 3.1: Talk

Monday, March 16, 2020, 09:30–09:45, CHE 91

Intrinsic oxygen vacancy driven universal 1/f noise behaviour of yttrium oxide-based Resistive Random Access Memory devices — •Eszter Piros¹, Martin Lonsky², Stefan Petzold¹, Jens Müller², and Lambert Alff¹ — ¹Institute of Materials Science, ATFT, Technische Universität Darmstadt, Darmstadt, Germany — ²Institute of Physics, Goethe- University Frankfurt, Frankfurt am Main, Germany

Resistive Random Access Memory (RRAM) is an outstanding next-generation memory candidate due to its excellent performance and scaling potential. However, further improvement of device reliability and variability is required. In this respect, the choice of materials can play a key role. Y₂O₃ is a very interesting material for resistive switching as 25% of the anion sublattice is unoccupied. Yttria-based devices show gradual switching under DC and nanosecond-regime voltage pulse operation [1], and thus can be utilized in multi-bit and neuromorphic applications. To assess device reliability and to gain insight into the charge transport characteristics, low-frequency noise measurements were performed on Y₂O₃-based RRAM devices at several intermediate resistance states and as a function of DC switching cycles. A universal noise behaviour was observed with a frequency exponent of α ≈ 1.2 that is independent of the device resistance and the number of DC switching cycles. The noise magnitude is found to systematically decrease with DC cycling and to increase with the maximum applied voltage in the reset process.

[1] S. Petzold et al., Semicond. Sci. Technol. 34, 075008 (2019)