Dresden 2020 – scientific programme
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DS: Fachverband Dünne Schichten
DS 3: Thin Film Applications I
DS 3.2: Talk
Monday, March 16, 2020, 09:45–10:00, CHE 91
Heavy ion irradiation effects on emerging memories: OxRAM, FeRAM and PCM — •Tobias Vogel1, Nico Kaiser1, Eszter Piros1, Maximilian Lederer2, Ricardo Olivo2, Tarek Ali2, Anna Lisa Serra3, Thomas Kämpfe2, Stefan Petzold1, Gabriele Navarro3, Christelle Charpin-Nicolle3, Christina Trautmann1,4, and Lambert Alff1 — 1TU Darmstadt, Darmstadt, Germany — 2Fraunhofer IPMS, Dresden, Germany — 3CEA LETI, Grenoble, France — 4GSI Helmholtzzentrum, Darmstadt, Germany
Emerging memory classes such as oxide based resistive random-access memory (OxRAM), ferroelectric random-access memory (FeRAM) or phase-change memory (PCM) are discussed as the successor of flash technology for highly-scaled device technology. Thereby, radiation hardness is of particular interest, enabling applications e.g. in space conditions. Here, Resistive Random-Access Memory (RRAM) devices are promising for applications in harsh radiation environments due to their superior data retention upon ionizing radiation, especially compared to flash technology. [1] In this study, we compare the effect of heavy ion irradiation, the most hazardous kind of ionizing irradiation, on the structural and electrical properties of different emerging memory classes: Phase Change Memory (PCM) based on GST, Ferroelectic Random Access Memory (FeRAM) and OxRAM based on HfOx. [1] S. Petzold et al., Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory, IEEE Trans. Nucl. Sci. 66, 1715 (2019).