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DS: Fachverband Dünne Schichten
DS 30: Poster: Organic Thin Films and Thin Oxides
DS 30.13: Poster
Mittwoch, 18. März 2020, 15:00–18:00, P1A
Multiscale modeling of VCM-based ReRAMs — •Nils Sommer1, Kristof Lange2, Soekki Son1, Alexander Zurhelle2, Rainer Waser1,2, and Stephan Menzel1 — 1Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich, Jülich, Germany — 2Institute for Materials in Electrical Engineering II (IWE2), RWTH Aachen University, Aachen, Germany
Memristive elements enable the development of special, completely new hardware for neuromorphic systems. A promising class of memristive elements are redox-based resistive cells (ReRAMs), e.g. based on the valence change mechanism (VCM). In VCM cells, the primary switching mechanism is based on the movement of oxygen vacancies. However, the details of the switching process remain unclear. Our goal is to gain a deeper understanding of switching dynamics and limitations with a multiscale modeling approach. Using atomistic and continuous model simulations, we investigate the formation and dynamics of oxygen vacancies in the VCM cells as a function of the voltage, time, temperature and boundary effects such as oxygen exchange at the electrodes. Our results are the basis for physics based compact models that can be used for circuit designs.