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DS: Fachverband Dünne Schichten

DS 31: Poster: Layer Deposition and Layer Properties

DS 31.6: Poster

Mittwoch, 18. März 2020, 15:00–18:00, P1A

Cesium-intercalated bulk HfSe₂ investigated by electron spectroscopy — •Jochen Simon, Martin Knupfer, and Bernd Büchner — Leibniz Institute for Solid State and Materials Research, Dresden, Germany

We studied cesium-intercalated bulk HfSe₂ by combining electron energy loss spectroscopy and angle-resolved photoemission spectroscopy. The strong anisotropy, the band gap and the predicted electron mobilities make HfSe₂ a promising candidate for optical and electrical devices. Intercalation leads to a degree of disorder in the crystalline structure while superstructures emerge for higher doping levels. The change of the lattice parameters is less than 1% (in-plane) and 70% (out-of-plane), respectively. Loss spectra reveal features we consider to be charge carrier plasmons, in agreement with the semiconductor-to-metal transition indicated by angle-resolved photoemission spectroscopy. As expected for an ideal electron gas, the plasmon shows a quadratic momentum dispersion.