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DS: Fachverband Dünne Schichten

DS 31: Poster: Layer Deposition and Layer Properties

DS 31.8: Poster

Mittwoch, 18. März 2020, 15:00–18:00, P1A

Strain Engineering of Antiferroelectric Thin Films — •Thorsten Schneider, Mahdad Mohammadi, Juliette Cardoletti, Maohua Zhang, Philipp Komissinskiy, and Lambert Alff — TU Darmstadt, Darmstadt, Germany

The demand for smaller and more efficient energy storage devices is ever-present in modern society. Within these, capacitors play an important role for short-time energy storage and conversion with high power density. However, to reduce the space consumption of these capacitors, the necessity for larger energy densities is of significant importance.

Antiferroelectric (AFE) Materials have the opportunity to overcome the problem of low energy density while maintaining a large power density due to a high polarization with no remnant polarization. Of the few known, lead-free AFE materials, NaNbO₃ offers a good opportunity to investigate the interplay between the polar and antipolar phase, since the energy barrier between these two phases is very small.
Here we present investigations of NaNbO₃ thin films. By utilizing epitaxial strain, a property closely linked with ferroelectricity, we manipulate the energy difference between the AFE and FE state in an attempt to stabilize the AFE double-hysteresis behaviour. As shown by X-Ray Diffraction measurements, the NaNbO₃ thin films grown on various perovskite single-crystals like SrTiO₃, LSAT and DyScO₃, are epitaxially strained. The AFE properties of the films are monitored using measurements of the polarization versus the electric field.