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DS: Fachverband Dünne Schichten

DS 32: Poster: Optical Analysis of Thin Films

DS 32.9: Poster

Mittwoch, 18. März 2020, 15:00–18:00, P1A

Controlling the phase-change of Ge₂Sb₂Te₅ via ion beam doping — •Robin Schock, Martin Hafermann, Konstantin Ruffert, and Carsten Ronning — Institut of Solid State Pyhsics, Friedrich Schiller University Jena, Max-Wien-Platz 1, 07743 Jena, Germany

The phase-change material Ge₂Sb₂Te₅ (GST) builds the basis for reconfigurable optical devices like rewritable data storage or switchable metasurfaces, because of its drastic differences in the electrical and optical properties accompanying the phase-change. In such devices switching between crystalline and amorphous states can be triggered by either electrical, thermal or optical external stimuli that exceeds a specific energy threshold. Although there is already a wide field of applications, a major flaw is the inability to tune the phase-change threshold for various applications. Doping of GST can be utilized to change the crystallization kinetics and enables the manipulation of the energy threshold. As doping during the growth process of GST films is limited, we used ion beam implantation for non-equilibrium doping, which enables us additional control of the lateral doping distribution. Thus, we implanted various ion species and doping concentrations into GST thin films and directly observed the phase-change via differential reflection measurements during heating of our samples. We show that ion beam doping is a powerful tool to tailor the phase-change temperature of GST over a broad temperature range.