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DS: Fachverband Dünne Schichten

DS 33: Poster: Thin Films: Applications, Transport and Phase Change Materials

DS 33.2: Poster

Mittwoch, 18. März 2020, 15:00–18:00, P1A

MoS2 as universal charge selective layer in Sb2S3 based TF solar cells — •Leonid Shupletsov^1,2, Pascal Büttner¹, Yuanyuan Cao¹, and Julien Bachmann^1,3 — ¹FAU, IZNF, Cauerstraße 3, 91058 Erlangen, Germany — ²FHI, Faradayweg 4-6, 14195 Berlin, Germany — ³Institute of Chemistry, Saint Petersburg State University, Universitetskii pr. 26, 198504 St. Petersburg, Russia

To comply with the rising demand in green energy, new durable photovoltaic devices, which use earth abundant, non-toxic and affordable materials, are required. Antimony (III) sulphide (Sb2S3), with a direct band gap of 1.7 eV and very high absorption coefficient, is a promising absorption material candidate for novel thin film (TF) photovoltaics. Better charge selective materials must be found to achieve economically viable efficiencies, and avoid organic compounds. We demonstrate the proof of principle for the utilization of bulk MoS2 as a universal selective carrier material in Sb2S3 based TF solar cells, capable of replacing the usually organic hole transport (HTL) and the metal oxide electron transport layers (ETL). Cyclovoltammetric deposition of uniform amorphous MoS2 thin films from aqueous solution on ITO with tens of nanometres thickness was optimized and compared to atomic layer deposition (ALD). Thermal treatment was employed to convert the as grown layers into a crystalline phase. The layer properties vary depending on the deposition method which allowed to build devices with MoS2 as ETL, HTL or both. High current extraction was achieved with MoS2 replacing both charge selective layers. This study shows the great tunability and application potential of bulk MoS2.