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DS: Fachverband Dünne Schichten
DS 33: Poster: Thin Films: Applications, Transport and Phase Change Materials
DS 33.3: Poster
Mittwoch, 18. März 2020, 15:00–18:00, P1A
Lithographical Fabrication of Single Crystal OFET Arrays by Area Selective Growth and Solvent Vapor Annealing — •Zhifang Wang1,2, Hong Wang1, Wenchong Wang1, and Lifeng Chi2 — 1Physikalisches Institut and Center for Nanotechnology (CeNTech), Universität Münster, 48149 Münster, Germany. — 2Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P.R. China
OFET arrays based on miniaturized organic single crystals play an important role in reading-out circuit, which is crucial for high peformance and high level integration organic electronics. Here, we achieved high uniformity and high density single crystal OFET arrays by using a lithography compatible strategy that combines area selective growth and subsequent solvent vapor annealing process. The organic semiconductor molecule triethylsilylethynyl anthradithiophene (TES-ADT) can first selectively grow on prepatterned drain-source electrodes, then further convert into discrete single crystals by solvent vapor annealing. The results show that the crystals very uniform in size, with two orders of improvement in carrier mobility in comparison to that of amorphous/polycrystalline film. With the method, cross-talk between devices can be completely surpressed. OFET and basic logic gate arrays with reading-out electrodes are further demonstrated.