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DS: Fachverband Dünne Schichten
DS 37: Focus Session: Functional Metal Oxides for Novel Applications and Devices II (joint session HL/DS)
DS 37.8: Vortrag
Donnerstag, 19. März 2020, 12:15–12:30, POT 81
Epitaxy of κ-(Al,Ga)2O3 heterostructures and superlattices by VCCS-PLD — •Philipp Storm1, Max Kneiss1, Thorsten Schultz2, Daniel Splith1, Holger von Wenckstern1, Norbert Koch2, Michael Lorenz1, and Marius Grundmann1 — 1Universität Leipzig, Felix-Bloch Institut für Festkörperphysik — 2Humboldt Universität zu Berlin, Institut für Physik
Ga2O3 is a wide band gap semiconductor with pronounced polymorphism. The thermodynamically stable and therefore most often investigated polymorph is the monoclinic β-phase. However, the metastable, orthorhombic κ-phase gained significant interest due to its high predicted spontaneous polarization of 23 µC/cm2 [1]. Exploiting the polarization differences at κ-Ga2O3/CaCO3 [2] or κ-Ga2O3/κ-(Al,Ga)2O3 heterointerfaces could allow for the formation of 2DEGs with high carrier densities, crucial for QWIP or HEMT devices. Nevertheless, only little is known about κ-(Al,Ga)2O3 heterostructures [3]. In this work, VCCS-PLD (vertical continuous composition spread pulsed laser deposition) [4] was utilized for the growth of κ-(Al,Ga)2O3 heterostructures and superlattices that were investigated regarding structural, morphological and optical properties to evaluate their potential for device applications.
[1] M. B. Maccioni et al. : Appl. Phys. Express 9, 041102 (2016)
[2] S. B. Cho et al. : Appl. Phys. Lett. 112, 162101 (2016)
[3] P. Storm et al. : APL Mater. 7, 111110 (2019)
[3] M. Kneiß et al. : ACS Comb. Sci. 20, 643 (2018)