Dresden 2020 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 37: Focus Session: Functional Metal Oxides for Novel Applications and Devices II (joint session HL/DS)
Donnerstag, 19. März 2020, 09:30–13:00, POT 81
Metal oxides exhibit a myriad of fascinating physical properties that enable a large variety of potential applications such as sensors and detectors, solar energy harvesting, transparent and potentially bendable electronics, power electronics, high-electron-mobility transisitors, memristors, topological quantum computation and so on. These functionalities typically require homo- or heteroepitaxial layers of high crystallinity with bendable amorphous semiconducting oxides as an exception. This session sets a focus on growth of bulk and thin films, experimental and theoretical investigation of their physical properties as well as fabrication and characterization of demonstrator devices.
Organizers: Oliver Bierwagen (Paul-Drude-Institut für Festkörperelektronik, Berlin), Holger Eisele (TU Berlin), Jutta Schwarzkopf (Leibniz-Institut für Kristallzüchtung, Berlin) and Holger von Wenckstern (Universität Leipzig).
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09:30 | DS 37.1 | Hauptvortrag: Basics of Gas Sensing with Semiconducting Metal Oxides — •Nicolae Barsan |
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10:00 | DS 37.2 | Optical and photocatalytic properties of gallium-zinc-oxynitrides thin films grown by molecular beam epitaxy — •Elise Sirotti, Max Kraut, Florian Pantle, and Martin Stutzmann |
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10:15 | DS 37.3 | Surface Stability of β-Ga2O3 at Realistic Temperature and Pressure Conditions from First Principles — •Konstantin Lion, Sergey V. Levchenko, Matthias Scheffler, and Claudia Draxl |
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10:30 | DS 37.4 | Investigations of β-Ga2O3(100) cleavage surfaces by scanning tunneling microscopy and spectroscopy — •Celina Seraphin Schulze, Jonathan Hofmann, Christian Bruckmann, Martin Franz, Zbigniew Galazka, Wjatscheslav Martyanov, and Holger Eisele |
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10:45 | DS 37.5 | Growth and characterization of Si delta-doped β-Ga2O3 layers by MOVPE — •Saud Bin Anooz, Raimund Grüneberg, Robert Schewski, Martin Albrecht, Andreas Fiedler, Klaus Irmscher, Zbigniew Galazka, Günter Wagner, and Andreas Popp |
| 11:00 | 30 min. break | ||
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11:30 | DS 37.6 | Hauptvortrag: Ultra-thin oxides on InGaN nanowires: Passivation layers for nanostructured photoelectrodes and optical analysis of chemical processes — Paula Neuderth, Mariona Coll, Jörg Schörmann, Christian Reitz, Jordi Arbiol, Roland Marschall, and •Martin Eickhoff |
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12:00 | DS 37.7 | Growth Window, Solubility Limit and Material Properties of κ-(AlxGa1−x)2O3 PLD thin films — •A. Hassa, C. Wouters, M. Kneiss, P. Storm, H. von Wenckstern, D. Splith, C. Sturm, M. Albrecht, and M. Grundmann |
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12:15 | DS 37.8 | Epitaxy of κ-(Al,Ga)2O3 heterostructures and superlattices by VCCS-PLD — •Philipp Storm, Max Kneiss, Thorsten Schultz, Daniel Splith, Holger von Wenckstern, Norbert Koch, Michael Lorenz, and Marius Grundmann |
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12:30 | DS 37.9 | Tin-assisted growth of κ-(AlxGa1−x)2O3/(InxGa1−x)2O3 superlattice heterostructures by pulsed laser deposition — •Max Kneiss, Philipp Storm, Anna Hassa, Daniel Splith, Chris Sturm, Holger von Wenckstern, Michael Lorenz, and Marius Grundmann |
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12:45 | DS 37.10 | Band offsets at κ-([Al,In]xGa1−x)2O3/MgO interfaces — •Thorsten Schultz, Max Kneiß, Philipp Storm, Daniel Splith, Holger von Wenckstern, Marius Grundmann, and Norbert Koch |