Dresden 2020 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 38: 2D Materials and their Heterostructures III (joint session DS/HL)
DS 38.2: Vortrag
Donnerstag, 19. März 2020, 11:15–11:30, CHE 89
Proximity-induced spin Hall effect in graphene/WSe2 van der Waals heterostructures with tunable, highly efficient spin-to-charge conversion — •Franz Herling1,2, C.K. Safeer1, Josep Ingla-Aynés1, Nerea Ontoso1, Luis E. Hueso1,3, and Fèlix Casanova1,3 — 1CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain — 2QuESTech, Horizon 2020 ITN, Marie Sklodowska-Curie Action (No 766025) — 3IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
The proximity effect in two-dimensional materials opens ways to achieve important functions for future spintronic devices. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to highly efficient spin-to-charge conversion (SCC) by spin Hall effect (SHE) that is predicted to be controllable by a gate voltage. Here, we report for the first time the observation of the SHE in graphene proximitized with WSe2. By Hanle precession measurements, we quantify the spin transport and SCC parameters from 10 K up to room temperature. Exceptional for graphene/TMD devices, the sole mechanism is the SHE for all measurements and no Rashba-Edelstein effect is observable. Importantly, we are able to amplify and turn off the SCC by applying a back-gate voltage, demonstrating the long-awaited milestone of an electrically-tunable SHE. The amplified SCC shows a high efficiency, measured with an unprecedented SCC length of up to 41 nm (with a lower limit of 20 nm).