Die DPG-Frühjahrstagung in Dresden musste abgesagt werden! Lesen Sie mehr ...

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 4: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS/O)

DS 4.11: Vortrag

Montag, 16. März 2020, 12:30–12:45, POT 81

Characterization of interlayer excitons in MoSe₂-WSe₂ heterostructures in high magnetic fields — •Johannes Holler¹, Michael Kempf³, Jonas Zipfel¹, Mariana Ballottin², Anatolie Mitioglu², Philipp Nagler¹, Michael Högen¹, Alexey Chernikov¹, Peter Christianen², Christian Schüller¹, and Tobias Korn³ — ¹Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany — ²High Field Magnet Laboratory (HFML EMFL), Radboud University Nijmegen, Netherlands — ³Institut für Physik, Universität Rostock, Germany

In the recent years, the research on transition-metal dichalchogenides (TMDCs) and especially their heterostructures has increased a lot. These heterostructures are fabricated by stacking two different TMDCs on top of each other. With the right material combination, a type-II band alignment can be achieved and electrons and holes are spatially separated forming so-called interlayer excitons (IEXs).

Here, we study these IEXs in MoSe₂-WSe₂ heterostructures. In low-temperature PL measurements in magnetic fields of up to 30T, we observe a giant valley-selective splitting and a resulting near-unity valley polarization. In time-resolved measurements, we track the buildup of IEX valley polarization in the magnetic field. We also find a clear dependence of the magnetic-field behavior of the IEX on the stacking angles.