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DS: Fachverband Dünne Schichten

DS 4: 2D semiconductors and van der Waals heterostructures I (joint session HL/DS/O)

DS 4.5: Vortrag

Montag, 16. März 2020, 10:30–10:45, POT 81

Near-field photoluminescence of two-dimensional semiconductors — •Vlastimil Křápek, Petr Dvořák, Martin Konečný, Lukáš Kejík, Michal Horák, and Tomáš Šikola — CEITEC, Brno University of Technology, Purkyňova 123, 61200 Brno, Czech Republic

Layered two-dimensional semiconductors are ideal light sources for on-chip integration. They exhibit strong luminescence even at elevated temperature, are very compact, highly tunable, and capable of single-photon emission. Since the wavelength of the light is considerably larger than the physical dimensions of the emitter, near-field handling of the emission with a deeply subwavelength spatial resolution would be of great importance. Here we present fully near-field photoluminescence experiment of two-dimensional semiconductors, with a surface plasmon interference device (SPID) used for the excitation and scanning near-field optical microscopy (SNOM) for the collection.

A SPID is formed by an opaque gold layer with the thickness of about 200 nm with the subwavelength grooves serving as sources of surface plasmon polaritons (SPP) [1]. We characterize the electric near field of SPP by SNOM, demonstrating the ability of SPP to excite the semiconductor placed on the SPID. We also demonstrate the polarization sensitivity of the experiment [1,2]. Next, we put various layered two-dimensional semiconductors on top of the SPID and characterize their SPP-excited luminescence by SNOM, demonstrating subwavelength spatial resolution.

[1] P. Dvořák et al., Opt. Express 25, 16560 (2017).

[2] P. Dvořák et al., Nanoscale 10, 21363 (2018).