Dresden 2020 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 42: Focus Session: Functional Metal Oxides for Novel Applications and Devices III (joint session HL/DS)
DS 42.2: Vortrag
Donnerstag, 19. März 2020, 15:15–15:30, POT 81
Raman-Spectroscopy of corundum-like α-Ga2O3 grown by HVPE — •Jona Grümbel1, Pingfan Ning1,3, Jürgen Bläsing1, Dae-Woo Jeon2, Martin Feneberg1, and Rüdiger Goldhahn1 — 1Otto-von-Guericke-Universität Magdeburg — 2Korean Institute of ceramic Engineering and Technology, Seoul, South Korea — 3School of Electronics and Information Engineering, Tiangong University, China
Ga2O3 is a high-bandgap semiconductor, whose stable β-phase is already applicable to semiconductor power devices like FETs and Schottky-Diodes. The metastable, corundum-like α-phase is less discussed, but allows bandgap-engineering by alloying with α-Al2O3 (sapphire) or α-In2O3.
Here, we investigate the lattice vibrations in the context of crystal quality. Therefore, three different samples grown by three different variations of HVPE (halide vapor phase epitaxy) are investigated. For the characterization of phonon modes, Raman Spectroscopy is employed.
All seven Raman-active phonon modes are identified in different Raman setup configurations. We investigate the correlation of phonon energies and lattice parameters as determined by x-ray diffraction. A small but detectable influence of phonon deformation potentials is found. Moreover, we find a very pronounced influence of crystal quality - as witnessed by ω-scan relative amplitudes - on certain Raman-active phonon modes which might be used as marker for ample quality.