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DS 43: Thin Film Properties: Structure, Morphology and Composition II
Donnerstag, 19. März 2020, 16:45–18:15, CHE 89
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16:45 |
DS 43.1 |
Growth and electronic structure of hexagonal BN on a curved Rh(111) crystal — •Khadiza Ali, Laura Fernandez, Anna Makarova, Igor Piš, Federica Bondino, Enrique Ortega, and Fredrick Schiller
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17:00 |
DS 43.2 |
Broad Absorptance Behavior of High Entropy Oxide (MgCoNiCuZn)O — •Maria Barrera, Emeline Michele, Lars Wening, and Matthias Wuttig
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17:15 |
DS 43.3 |
Investigation of thin boron layers on silicon (PureB) by means of x-ray photoelectron spectroscopy (XPS) — •Annika Stefanie Burkowitz, Marie Schmitz, Lukas Kesper, Ulf Berges, Stefan Dreiner, Daniel Weier, Lis Karen Nanver, and Carsten Westphal
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17:30 |
DS 43.4 |
Important factors influencing the electrical properties of polycrystalline AZO thin films — •Petr Novák, Tomáš Kozák, Petra Šotová, Lucie Prušáková, and Rostislav Medlín
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17:45 |
DS 43.5 |
Low-temperature growth of Ga2O3 thin films by PEALD — •Ali Mahmoodinezhad, Christoph Janowitz, Franziska Naumann, Paul Plate, Hassan Gargouri, Karsten Henkel, and Jan Ingo Flege
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18:00 |
DS 43.6 |
Transitions between growth modes in lattice KMC simulations — •Eelco Empting, Miriam Klopotek, and Martin Oettel
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