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DS: Fachverband Dünne Schichten
DS 45: Thin Film Properties: Structure, Morphology and Composition III
DS 45.5: Vortrag
Freitag, 20. März 2020, 10:30–10:45, CHE 89
Si nanopillar deformation by heavy polyatomic ion impacts — •Lothar Bischoff1, Wolfgang Pilz1, Hans-Jürgen Engelmann1, Xiaomo Xu1, Wolfhard Möller1, Karl-Heinz Heinig1, Sadegh Ghaderzadeh1, Gregor Hlawacek1, Ahmed Gharbi2, and Raluca Tiron2 — 1Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden — 2CEA-Leti, Grenoble, France
Si nanopillars for the fabrication of vertical nanowire gate-all-around Single Electron Transistors [1], have been irradiated with Si++, Pb+, Pb++, Au +, Au++, Au2+, and Au3+ ions accelerated by 30 kV. A FIB of mass separated ions, extracted from a Liquid Metal Alloy Ion Source [2], has been scanned over regular arrays of Si nanopillars of different diameters and pillar distances. The irradiations have been performed at RT and 400∘C. Different morphological changes of the pillars like thinning, height reduction, tilting etc. have been observed which can be attributed to ion erosion (sputtering), impact-induced viscous flow or even transient nanosecond-scale melting [3]. The pillars were imaged by AFM, SEM, TEM and HIM. 3D Monte Carlo simulations [4] of ion and recoil trajectories based on the Binary Collision Approximation and Molecular Dynamics calculations have been carried out in order to discriminate the dominating processes.
[1] EU project Ions4SET, Horizon 2020 grant No. 688072 [2] L. Bischoff, et al., Appl. Phys. Rev. 3 (2016) 021101 [3] C. Anders, K.-H. Heinig, H. Urbassek, Phys. Rev. B87 (2013) 245434 [4] W. Möller, NIM B322 (2014) 23