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DS: Fachverband Dünne Schichten
DS 8: Layer Deposition I: Inorganic Thin Films
DS 8.3: Vortrag
Montag, 16. März 2020, 15:30–15:45, CHE 89
Tailoring material properties of SiOx thin films by applying an electric field during plasma enhanced atomic layer deposition — •Vivek Beladiya1,2, Martin Becker3, Marek Sierka3, and Adriana Szeghalmi1,2 — 1Institute of Applied Physics, Friedrich Schiller University, Jena, Germany. — 2Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Jena, Germany. — 3Otto Schott Institute of Materials Research, Friedrich Schiller University, Jena, Germany.
SiO2 is a widely used metal oxide in microelectronics, optics, barrier coatings, and solar cells. Excellent optical, mechanical, chemical and structural properties are required for the optimum performance of these devices. These properties can be tailored by controlling ion energies by varying average bias voltage at the substrate stage during oxygen plasma in PEALD process.
In this work, the effect of applied average-bias voltage on SiO2 thin films properties, deposited in two different deposition tools were investigated. The average bias voltage up to -300 V was applied during the oxygen plasma exposure. A very low average-bias voltage (< -10 V) was sufficient to alter material properties indicating an influence on the surface chemical reactions. The stoichiometric and dense SiO2 thin films with low OH content were deposited by applying substrate biasing. The observed experimental trends were supported by atomistic simulations. It is shown that relevant surface reaction can be influenced by applying electric field during plasma step.