Dresden 2020 – scientific programme
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DS: Fachverband Dünne Schichten
DS 8: Layer Deposition I: Inorganic Thin Films
DS 8.6: Talk
Monday, March 16, 2020, 16:15–16:30, CHE 89
Superconducting titanium nitride thin films deposited by plasma enhanced atomic layer deposition — •Luisa Ehmcke1, Stefanie Haugg1, Kaline Furlan2, Gerold Schneider2, Robert Blick1, and Robert Zierold1 — 1Center for Hybrid Nanostructures (CHyN), University of Hamburg, 22761 Hamburg, Germany — 2Institute of Advanced Ceramics, Hamburg University of Technology, 21073 Hamburg, Germany
Titanium nitride is a widely used material in microelectronics due to its low resistivity and high thermal stability. Moreover, titanium nitride is a type 1 superconductor with a critical bulk temperature of 5.6 K. Herein, we report about thin film titanium nitride, which was grown by plasma enhanced atomic layer deposition (PE-ALD) by utilizing tetrakis(dimethylamino)titanium (TDMAT) and a nitrogen/hydrogen mixture as precursor. By investigating the sheet resistance, the critical temperature, and the critical field the deposition process was optimized with respect to plasma power, plasma time, gas composition, and process temperature. We observed (i) a transition to an effective 2D electronic system and (ii) weak antilocalization in our films in low temperature magnetotransport studies [1,2]. These observations in combination with structural and compositional analysis prove the low impurity content of our thin film samples.
[1] Postolova et al., Sci. Rep., (2017) DOI: 10.1038/s41598-017-01753-w [2] Gupta et al., J. Magn. Magn. Mater., (2019) DOI: /10.1016/j.jmmm.2019.166094