Dresden 2020 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 10: Focus: High-resolution Lithography and 3D Patterning (Part I) (joint session KFM/CPP/HL)

HL 10.1: Hauptvortrag

Montag, 16. März 2020, 09:30–10:00, TOE 317

Novel device integration - combining bottom-up and top-down approaches — •Artur Erbe — Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

Scaling electronic devices to smallest structure sizes well below 10nm will require novel developments for the fabrication of single components. Smallest functional devices can be assembled using chemical methods leading to, e.g., single molecules with electronic functionalities. Reliable contacting of single molecules using metallic contacts is, however, an extremely challenging task which has not been solved so far. We have therefore developed techniques which use self-assembly for the creation of conducting nanostructures in order to create small, self-assembled circuits which then can be contacted reliably using standard lithographic methods. In this talk, we demonstrate how single organic molecules can be contacted using mechanically controllable break junctions. In addition, we show how DNA Origamis can be used for the self-assembly of metallic nanowires, which are contacted using electron beam lithography and electrically characterized. Further integration of such nanostructures into standard silicon electronics may be achieved by connecting them with 1d- or 2d-semiconductors. We have therefore developed transistors based on 2d-materials and silicon nanowires using electron beam lithography and dry etching (i.e. using a classical top-down approach), which are reconfigurable. With the combination of these devices with self-assembled nanostructures, a large variety of electronic nanocircuits can be constructed in future applications.