Dresden 2020 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Focus Session: Spin-Charge Interconversion (joint session MA/HL)

HL 13.1: Invited Talk

Monday, March 16, 2020, 15:00–15:30, HSZ 04

SrTiO3-based 2-dimensional electron gases for ultralow power spintronics — •Manuel Bibes — CNRS/Thales, Palaiseau, France

The MESO transistor is a spin-based non-volatile device proposed by Intel in which magnetic information is written by a magnetoelectric element and read out by a spin-orbit element through the inverse spin Hall effect or the inverse Edelstein effect (IEE). In this talk, I will show that the 2DEG that forms at the interface of SrTiO3 (STO) with LaAlO3 or reactive metals such as Al may be exploited to interconvert spin and charge currents through the direct and inverse Edelstein effects with high efficiencies. I will first present spin to charge conversion experiments using the spin-pumping technique to inject a spin current in the 2DEG. By applying a gate voltage, we tune the position of the Fermi level in the multi-orbital electronic structure of STO, which results in a strong variation of the IEE amplitude with sign changes. This can be modelled through a tight-banding modelling of the band structure measured by ARPES. Importantly, a finite conversion effect persists at room temperature, with a figure-of-merit competitive for MESO-based electronics. In a second part, I will present gate-controlled, all-electrical spin current generation and detection in planar nanodevices free from ferromagnets and only based on a STO 2DEG. Here, the spin current is generated by the direct 2D spin Hall effect from a charge current running in the 2DEG, transported through the device over several microns and reconverted into a charge current by the inverse 2D spin Hall effect.