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HL: Fachverband Halbleiterphysik

HL 13: Focus Session: Spin-Charge Interconversion (joint session MA/HL)

HL 13.2: Hauptvortrag

Montag, 16. März 2020, 15:30–16:00, HSZ 04

Spin-to-charge current conversion for logic devices — •Felix Casanova — CIC nanoGUNE, San Sebastian, Basque Country, Spain

The integration of logic and memory in spin-based devices, such as the recent MESO proposal by Intel [1], could represent a post-CMOS paradigm. A key player is the spin Hall effect (SHE), which allows to electrically create or detect pure spin currents without using ferromagnets (FM). Understanding the different mechanisms giving rise to SHE allows to find and optimize promising materials for an efficient spin-to-charge conversion (SCC). We unveiled these mechanisms in prototypical materials Pt and Ta [2]. A radically different approach is by engineering a van der Waals heterostructure which combines graphene with a transition metal dichalcogenide. We recently demonstrated SHE in graphene due to spin-orbit proximity with MoS2 [3]. The combination of long-distance spin transport and SHE in different parts of the same material gives rise to an unprecedented SCC efficiency.

Finally, I will present a novel and simple FM/Pt nanodevice to readout the in-plane magnetic state of the FM electrode using SHE [4]. The spin-orbit based detection allows us to independently enhance the output voltage (needed to read the in-plane magnetization) and the output current (needed for cascading circuit elements) with downscaling of different device dimensions, which are necessary conditions for implementing the MESO logic [1].

[1] Manipatruni et al., Nature 565, 35 (2019); [2] Sagasta et al., PRB 94, 060412 (2016); ibid. 98, 060410 (2018); [4] Safeer at al., Nano Lett. 19, 1074 (2019); [5] Pham et al., submitted.